“We Wouldn’t have experienced such a increase of electric vehicles without silicon carbide,�?claimed STMicroeletronics government Edoardo Merli. Just one of these specific properties is that gate oxides in SiC-based power devices are typically characterized by a relatively large number of interface states, causing the so-identified as threshold-voltage hysteresis. Silicon carbide https://www.quora.com/profile/Trevor-Flatcher-2/Exploring-the-High-Temperature-Performance-of-Silicon-Carbide-Special-Ceramics-https-www-macrocosmmaterial-com-news-E