Scanning gate microscopy is used to locally investigate electron transport in a high-mobility two-dimensional electron gas formed in a GaAs/AlGaAs heterostructure. Using quantum point contacts. we observe branches caused by electron backscattering decorated with interference fringes similar to previous observations by Topinka et al (2000 Science 289 2323). We investigate the branches ... https://www.roneverhart.com/Hot-Wheels-Ultimate-Octo-Car-Wash/